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| SEMICONDUCTOR TECHNICAL DATA General Description KHB7D0N65P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D0N65P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. A O C F E G B Q I FEATURES VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V K M L J D N N P Qg(typ.)= 32nC www..com H MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 160 1.28 150 -55 150 N DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q 1 2 3 RATING KHB7D0N65P1 KHB7D0N65F1 650 30 7 4.2 28 212 1.6 4.5 52 0.42 7* 4.2* 28* UNIT V V 1. GATE 2. DRAIN 3. SOURCE TO-220AB KHB7D0N65F1 A A F O C mJ mJ V/ns W W/ E G P B K L J D M M H Q Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient DIM MILLIMETERS _ 10.16 + 0.2 A _ 15.87 + 0.2 B _ C 2.54 + 0.2 _ D 0.8 + 0.1 _ E 3.18 + 0.1 _ F 3.3 + 0.1 _ 12.57 + 0.2 G _ 0.5 + 0.1 H J 13.0 MAX _ K 3.23 + 0.1 L 1.47 MAX _ 2.54 + 0.2 M _ N 4.7 + 0.2 _ O 6.68 + 0.2 P 6.5 _ Q 2.76 + 0.2 RthJC RthCS RthJA 0.78 0.5 62.5 2.4 62.5 /W /W /W 1 2 3 1. GATE 2. DRAIN 3. SOURCE TO-220IS * : Drain current limited by maximum junction temperature. D G S 2006. 2. 20 Revision No : 1 1/7 KHB7D0N65P1/F1 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=650V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=3.75A 650 2 0.8 1.2 10 4 100 1.4 V V/ A V nA Dynamic Total Gate Charge www..com Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance VDS=520V, ID=7.0A VGS=10V (Note4,5) - 32 5.4 12.6 20 40 125 80 1310 113 11.4 40 45 90 260 170 1700 147 14.8 pF ns nC VDD=325V RL=46 RG=25 (Note4,5) - VDS=25V, VGS=0V, f=1.0MHz - Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS 410 4 7 28 1.5 - A V ns C Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =8mH, IS=7.0A, VDD=50V, RG=25 , Starting Tj=25 . Note 3) IS 7.0A, dI/dt 200A/ , VDD 300 BVDSS, Starting Tj=25 , Duty Cycle 2%. . Note 4) Pulse Test : Pulse width Note 5) Essentially independent of operating temperature. 2006. 2. 20 Revision No : 1 2/7 KHB7D0N65P1/F1 ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 1 6.0 V 10 5.5 V Bottom : 5.0 V ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 150 C 10 0 10 0 25 C -55 C 10 -1 10 0 10 1 10 -1 2 4 6 8 10 www..com Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 3.0 VGS = 0V IDS = 250 RDS(ON) - ID On - Resistance RDS(ON) () 1.1 2.5 1.0 2.0 VG = 10V 0.9 1.5 VG = 20V 0.8 -100 -50 0 50 100 150 1.0 0 5 10 15 Junction Temperature Tj ( C ) Drain Current ID (A) IS - VSD 3.0 RDS(ON) - Tj VGS =10V IDS = 3.75A Reverse Drain Current IS (A) 10 1 Normalized On Resistance 2.5 2.0 1.5 1.0 0.5 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C) 2006. 2. 20 Revision No : 1 3/7 KHB7D0N65P1/F1 C - VDS 4500 4000 12 Qg- VGS Gate - Source Voltage VGS (V) Frequency = 1MHz ID=7A VDS = 520V VDS = 325V VDS = 130V 10 8 6 4 2 0 0 4 8 12 Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 Coss Crss Ciss 10-1 www..com 0 100 101 16 20 24 28 32 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Safe Operation Area Safe Operation Area Drain Current ID (A) 1ms 10ms Drain Current ID (A) 101 Operation in this area is limited by RDS(ON) 100s 101 Operation in this area is limited by RDS(ON) 10 s 100s 1ms 100ms 100 DC 100 10 ms DC 10-1 Tc= 25 C Tj = 150 C 2 Single nonrepetitive pulse 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10 100 101 102 103 10-2 0 10 101 102 103 Drain - Source Voltage VDS (V) (KHB7D0N65P1) Drain - Source Voltage VDS (V) (KHB7D0N65F1) ID - Tj 8 Drain Current ID (A) 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2006. 2. 20 Revision No : 1 4/7 KHB7D0N65P1/F1 Rth {KHB7D0N65P1} 100 Normalized Transient Thermal Resistance Duty=0.5 0.2 10-1 0.1 0.05 www..com PDM t1 t2 1 0.02 0.0 10-2 Sin gle P e uls - Duty Factor, D= t1/t2 - RthJC = Tj(max) - Tc PD 100 101 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) Rth {KHB7D0N65F1} Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 0.1 10-1 0.05 PDM t1 0.02 0.01 le Pu lse t2 - Duty Factor, D= t1/t2 - RthJC = 10-4 10-3 10-2 10-1 Tj(max) - Tc PD 100 101 10-2 10-5 g Sin Square Wave Pulse Duration (sec) 2006. 2. 20 Revision No : 1 5/7 KHB7D0N65P1/F1 - Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 VDSS 1.0 mA ID Q Qgs Qgd Qg VGS VDS www..com - Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V VGS ID(t) VDD VDS(t) Time tp - Resistive Load Switching VDS 90% RL 50V 25 VDS 10V VGS VGS 10% td(on) ton tr td(off) tf toff 2006. 2. 20 Revision No : 1 6/7 KHB7D0N65P1/F1 - Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) di/dt IRM IS Body Diode Reverse Current 0.8 VDSS driver www..com VDS (DUT) Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2006. 2. 20 Revision No : 1 7/7 |
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